New results on silicon microstrip detectors of CMS tracker
Creators
- Demaria, N.
- Albergo, S.
- Angarano, M.
- Azzi, P.
- Babucci, E.
- Bacchetta, N.
- Bader, A.
- Bagliesi, G.
- Basti, A.
- Biggeri, U.
- Bilei, G.M.
- Bisello, D.
- Boemi, D.
- Bolla, G.
- Bosi, F.
- Borrello, L.
- Bortoletto, D.
- Bozzi, C.
- Braibant, S.
- Breuker, H.
- Bruzzi, M.
- Buffini, A.
- Busoni, S.
- Candelori, A.
- Caner, A.
- Castaldi, R.
- Castro, A.
- Catacchini, E.
- Checcucci, B.
- Ciampolini, P.
- Civinini, C.
- Creanza, D.
- D'Alessandro, R.
- Da Rold, M.
- De Palma, M.
- Dell'Orso, R.
- Marina, R. Della
- Dutta, S.
- Eklund, C.
- Elliott-Peisert, A.
- Favro, G.
- Feld, L.
- Fiore, L.
- Focardi, E.
- French, M.
- Freudenreich, K.
- Fuertjes, A.
- Giassi, A.
- Giorgi, M.
- Giraldo, A.
- Glessing, B.
- Gu, W.H.
- Hall, G.
- Hammerstrom, R.
- Hebbeker, T.
- Hrubec, J.
- Huhtinen, M.
- Kaminsky, A.
- Karimaki, V.
- Koenig, St.
- Krammer, M.
- Lariccia, P.
- Lenzi, M.
- Loreti, M.
- Luebelsmeyer, K.
- Lustermann, W.
- Maettig, P.
- Maggi, G.
- Mannelli, M.
- Mantovani, G.
- Marchioro, A.
- Mariotti, C.
- Martignon, G.
- Evoy, B. Mc
- Meschini, M.
- Messineo, A.
- Migliore, E.
- My, S.
- Paccagnella, A.
- Palla, F.
- Pandoulas, D.
- Papi, A.
- Parrini, G.
- Passeri, D.
- Pieri, M.
- Piperov, S.
- Potenza, R.
- Radicci, V.
- Raffaelli, F.
- Raymond, M.
- Santocchia, A.
- Schmitt, B.
- Selvaggi, G.
- Servoli, L.
- Sguazzoni, G.
- Siedling, R.
- Silvestris, L.
- Skog, K.
- Starodumov, A.
- Stavitski, I.
- Stefanini, G.
- Tempesta, P.
- Tonelli, G.
- Tricomi, A.
- Tuuva, T.
- Vannini, C.
- Verdini, P.G.
- Viertel, G.
- Xie, Z.
- Li Yahong
- Watts, S.
- Wittmer, B.
Description
Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x1014 protons/cm2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a <1 0 0> substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability
Additional details
Identifiers
- PII
- S0168900200001820;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 447
- Journal Issue
- 1-2
- Journal Page Range
- p. 142-150
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Ukraine
- INIS RN
- 34051294
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRYSTALS; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; PROTON BEAMS; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS; SILICON; STABILITY
- Descriptors DEC
- BEAMS; ELEMENTS; MEASURING INSTRUMENTS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.