Published June 1, 2000 | Version v1
Journal article

New results on silicon microstrip detectors of CMS tracker

Description

Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x1014 protons/cm2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a <1 0 0> substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

Additional details

Identifiers

PII
S0168900200001820;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
447
Journal Issue
1-2
Journal Page Range
p. 142-150
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.