Published May 1988 | Version v1
Journal article Metadata-only

Radiation defects in gallium phosphide

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Yadernykh Issledovanij

Description

It is shown, that the donor levels: Ec-0.25 eV, Ec-0.50 eV and Ec-0.60 eV with concentrations of 7x1016 cm-3, 9x1016 cm-3, 3.1x1016 cm-3, respectively, correspond to main compensative centres, arising in electron irradiated P-type gallium phosphide. The intensive interaction of radiation defects is observed during the irradiated crystals' annealing, which results in formation of thermal stable defects

Additional details

Additional titles

Original title (Ukrainian)
Radyiatsyijnyi defekti u fosfyidyi gallyiyu

Publishing Information

Journal Title
Dopovidi Akademii Nauk Ukrains'koj RSR, Seriya A
Journal Issue
no.5
Series
Dopov. Akad. Nauk Ukr. RSR, Ser. A.
ISSN
0002-3531
CODEN
DUKAB

INIS

Country of Publication
Ukraine
Country of Input or Organization
USSR
INIS RN
20050176
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; ELECTRON BEAMS; GALLIUM PHOSPHIDES; MEDIUM TEMPERATURE; MEV RANGE 01-10; MILLI EV RANGE; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; THRESHOLD ENERGY; TRAPS; VACANCIES
Descriptors DEC
BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS