Energy deposition and radiation effect in MOS structure irradiated with electron beams

The energy deposition for electron beams in Si-SiO2 materials has been calculated with the two-group theory of electron transportation. The absorption dose for 1.0 MeV and 1.5 MeV electrons in MOS capacitors was measured with an extrapolation ionization chamber which is equivalent to silicon in stopping power. The chemical structure, interface states and C-V curve of the MOS samples were analyzed before and after irradiation with X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), deep level transient spectroscopy (DLTS) and C-V method. According to the theory and experimental data, the relationships among electron energy deposition, ionizing damage and radiation effect are derived from a view point of dosimetry. Finally, a preliminary explanation for the ionizing damage mechanisms is given