Monte Carlo simulation of electron transport properties in bulk wurtzite GaN in high electric field

An Ensemble Monte Carlo simulation has been used to model bulk electron transport at the rang 300 - 600 K, for wurtzite phase of GaN. Electronic states within the conduction band are representation by non parabolic ellipsoidal valleys centred on important symmetry point of the Brillouin zone (Γ - U - K). In the case of wurtzite GaN Transport has been modeling with an electric field applied both parallel and perpendicular to (0001) c-axis. Also temperature and doping dependencies of electron mobility in wurtzite structure GaN have been calculated. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobility decreases significantly with increasing doping concentration. Our result are in fair agreement with other recent calculations obtained using the experimental method.