Published 2002
| Version v1
Miscellaneous
Atomic and electronic structure of metals chemisorbed on silicon surfaces
Creators
- 1. The University of Newcastle, Callagan, NSW (Australia). School of Mathematical and Physical Sciences
Description
Full text: There is considerable fundamental and technological interest in the chemisorption of metals on semiconductor surfaces. This interest arises from the possibility of forming conducting layers either above (as in the case of potassium) or below (e.g. boron) the surface of the semiconductor. We will report the results of local density functional calculations of the atomic and electronic structure of different silicon-metal chemisorption systems. These calculations have been carried out using the fhi98md and VASP computer codes. Comparison will be made with both experiment and other theoretical work
Additional details
Publishing Information
- Imprint Title
- 15th Biennial Congress of the Australian Institute of Physics incorporating Australian Conference of Optical Fibre Technology (ACOFT) and Australian Optical Society (AOS). Handbook and abstracts
- Imprint Pagination
- 235 p.
- Journal Page Range
- p. 188
Conference
- Title
- 15. Biennial Congress of the Australian Institute of Physics. Physics and industry working together
- Dates
- 8-11 Jul 2002
- Place
- Sydney, NSW (Australia)
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 36063539
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- BORON; CHEMISORPTION; COMPARATIVE EVALUATIONS; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; F CODES; POTASSIUM; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; V CODES
- Descriptors DEC
- ALKALI METALS; CALCULATION METHODS; CHEMICAL REACTIONS; COMPUTER CODES; ELEMENTS; EVALUATION; MATERIALS; METALS; SEMIMETALS; SEPARATION PROCESSES; SORPTION; VARIATIONAL METHODS