Published July 7, 2014 | Version v1
Journal article Metadata-only

Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

Creators

  • 1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States)
  • 2. National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

Description

We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

Additional details

Identifiers

DOI
10.1063/1.4886598;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
116
Journal Issue
1
Journal Page Range
p. 014305-014305.10
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46012424
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
COOLING; ENERGY LOSSES; GERMANIUM SILICIDES; HEAT TRANSFER; LAYERS; NANOSTRUCTURES; RAMAN EFFECT; SILICON; STRAINS; THERMAL DIFFUSIVITY; THERMAL EFFLUENTS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; ENERGY TRANSFER; GERMANIUM COMPOUNDS; LOSSES; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES

Optional Information

Notes
(c) 2014 AIP Publishing LLC