Published October 1, 2010 | Version v1
Journal article

Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

  • 1. Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia)
  • 2. Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China)

Description

The electronic structure and thermoelectric properties of Bi2Te3 single crystals and graphene-doped Bi2Te3 polycrystalline samples were investigated with the aid of first-principles calculations, X-ray diffraction, scanning electron microscopy, Rietveld refinement, and thermal and transport measurements. It was found that the p electrons from the Bi and Te atoms are responsible for the density of states near the Fermi level. Experimental results show that the graphene-doped Bi2Te3 exhibits lower thermal conductivity and has a higher figure-of-merit than the single crystals.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.03.124

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.03.124;
PII
S0040-6090(10)00453-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
24
Journal Page Range
p. e57-e60
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Taiwan Association for Coatings and Thin Films Technology international thin films conference
Acronym
TACT 2009
Dates
14-16 Dec 2009
Place
Taipei, Taiwan (China)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.