Photoelectric properties of high-resistance PbTe single crystals

Photoelectric properties and domain instability were investigated in high-resistance monocrystals PbRe with Ga content NGa ≅ 1x1019-1.5x1020 cm-3 in 20-150 K temperature range. Band of ''impurity'' photoconductivity was found in homogeneous specimens PbTe for Δp ≅ 50 MeV upper valence zone. Position of this band with respect to v-zone doesn't depend practically on temperature. It is established that recombination time of nonequilibrium holes decreases with electrical field growth during excitation to impurity photoconductivity region. Strong field recombination domains related to the appearance of barriers by Ga doping, which can appear, for example, due to lattice reconstruction around ''impurity'' center during capture of electron with it, were discovered in p-type crystals