Published May 2009 | Version v1
Journal article

High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures

  • 1. Demidov Yaroslavl' State University (Russian Federation)
  • 2. Moscow State Regional University (Russian Federation)

Description

The high-frequency conductivity of a thin straight semiconductor wire with a circular cross section is treated in the context of the classical kinetic theory. The calculation is conducted for an extrinsic semiconductor with a simple band structure at any degree of degeneracy. The relation between the wire radius and the mean free path of charge carriers is taken to be arbitrary. The diffuse mechanism of reflection of charge carriers from the wire boundary is considered.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
43
Journal Issue
5
Journal Page Range
p. 617-623
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41011202
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE CARRIERS; CROSS SECTIONS; CYLINDRICAL CONFIGURATION; MEAN FREE PATH; QUANTUM WIRES; SEMICONDUCTOR MATERIALS
Descriptors DEC
CONFIGURATION; MATERIALS; NANOSTRUCTURES

Optional Information

Copyright
Copyright (c) 2009 Pleiades Publishing, Ltd.