Published May 2009
| Version v1
Journal article
High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures
- 1. Demidov Yaroslavl' State University (Russian Federation)
- 2. Moscow State Regional University (Russian Federation)
Description
The high-frequency conductivity of a thin straight semiconductor wire with a circular cross section is treated in the context of the classical kinetic theory. The calculation is conducted for an extrinsic semiconductor with a simple band structure at any degree of degeneracy. The relation between the wire radius and the mean free path of charge carriers is taken to be arbitrary. The diffuse mechanism of reflection of charge carriers from the wire boundary is considered.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 5
- Journal Page Range
- p. 617-623
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41011202
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CROSS SECTIONS; CYLINDRICAL CONFIGURATION; MEAN FREE PATH; QUANTUM WIRES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CONFIGURATION; MATERIALS; NANOSTRUCTURES
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.