Mechanism of annealing of VO defects in n-Si under pulse electron irradiation at high-temperatures

We study the kinetics of accumulation of vacancy-oxygen (VO) complexes in Czochralski-grown (Cz) n-Si, at various intensities of pulse 1-MeV electron radiation at temperatures higher than the temperature of the onset of the thermal annealing of VO (T ≥ 300 oC). It is shown that the irradiation with electrons at such temperatures causes the accelerated annealing of VO created by this radiation. The accelerated annealing of VO occurs during the action of a pulse of electrons. The maximum concentration of created VO increases with the radiation intensity and decreases, as the temperature of irradiated specimens increases. We propose a model of the process of accelerated annealing