Published November 2009 | Version v1
Journal article Metadata-only

Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

Creators

  • 1. Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain)
  • 2. School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

Description

By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 100 GHz are predicted in InGaAs diodes, being significantly higher, around 400 GHz, in the case of GaN structures. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/193/1/012018

Additional details

Identifiers

DOI
10.1088/1742-6596/193/1/012018;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
193
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
Acronym
EDISON 16
Dates
24-28 Aug 2009
Place
Montpellier (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42029871
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ASYMMETRY; COMPUTERIZED SIMULATION; ENERGY GAP; GALLIUM ARSENIDES; GALLIUM NITRIDES; GHZ RANGE; INDIUM ARSENIDES; MONTE CARLO METHOD; NANOSTRUCTURES; NONLINEAR PROBLEMS; OSCILLATIONS; SEMICONDUCTOR DIODES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SIMULATION