Published July 30, 2008
| Version v1
Journal article
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
Creators
- 1. Qunano AB, Scheelevaegen 17, Ideon Science Park, S-223 70 Lund (Sweden)
- 2. Solid State Physics/The Nanometer Consortium, Lund University, PO Box 118, S-221 00 Lund (Sweden)
- 3. Svedice AB, PO Box 685, SE-175 27 Jaerfaella (Sweden)
Description
Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/19/30/305201Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/30/305201;
- PII
- S0957-4484(08)77589-5;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 30
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39111689
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTROLUMINESCENCE; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM WIRES; SHELLS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS