Composition and atomic ordering of Ge/Si(001) wetting layers
- 1. European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble (France) and Max-Planck Institute fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
- 2. European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble (France)
- 3. Max-Planck Institute fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
- 4. Charles University, Faculty of Mathematics and Physics, Department of Electronic Structures, Ke Karlovu 5, 121 16 Prague (Czech Republic)
Description
A combination of X-ray diffraction with anomalous X-ray scattering at the Ge K edge and specular reflectivity measurements is used to reveal both composition and atomic ordering in Ge:Si wetting layers. By comparing the intensity distribution close to the (400) and (200) surface reflections we show that the Ge wetting layer is composed of a SiGe alloy which exhibits atomic ordering. Due to the Si interdiffusion the wetting layer thickness is larger than the nominal 3 ML Ge deposition. The chemical depth distribution is obtained from X-ray reflectivity measurements and confirms the enhanced Ge interdiffusion. These phenomena evidence the crucial interplay between surface kinetics and intermixing in SiGe thin films and nanostructures on Si(001) substrates
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2006.12.021;
- PII
- S0040-6090(06)01520-3;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 14
- Journal Page Range
- p. 5587-5592
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 9. International conference on surface X-ray and neutron scattering
- Dates
- 16-20 Jul 2006
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39018811
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEPOSITION; DEPTH; GERMANIUM ALLOYS; GERMANIUM SILICIDES; KINETICS; LAYERS; NANOSTRUCTURES; REFLECTIVITY; SILICON ALLOYS; SPATIAL DISTRIBUTION; SURFACES; THIN FILMS; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; FILMS; GERMANIUM COMPOUNDS; IONIZING RADIATIONS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SILICIDES; SILICON COMPOUNDS; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.