Published December 1, 2019 | Version v1
Journal article

Vortex shear banding transitions in superconductors with inhomogeneous pinning arrays

  • 1. Theoretical Division and Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Description

We numerically examine the flow of superconducting vortices in samples containing square pinning arrays in which a band of pins is removed. When a drive is applied at an angle with respect to the band orientation, we find that the vortex depinning initiates in the pin-free channel. The moving vortices form a series of quasi-one-dimensional shear bands that begin flowing in the bulk of the pin-free channel, and the motion gradually approaches the edge of the pinned region. The consecutive depinning of each shear band appears as a series of jumps in the velocity-force curves and as sharp steps in the spatial velocity profiles. When a constant drive is applied parallel to the pin-free channel along with a gradually increasing perpendicular drive, the net vortex velocity decreases in a series of steps that correspond to the immobilization of bands of vortices, and in some cases the flow can drop to zero, creating a field effect transistor phenomenon. These results should also be relevant to other types of systems that exhibit depinning in the presence of inhomogeneous pinning. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2399-6528/ab5e66

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics Communications
Journal Volume
3
Journal Issue
12
Journal Page Range
[10 p.]
ISSN
2399-6528

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52021142
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
FIELD EFFECT TRANSISTORS; INHOMOGENEOUS FIELDS; ONE-DIMENSIONAL CALCULATIONS; ORIENTATION; SHEAR; SUPERCONDUCTORS; VORTICES
Descriptors DEC
SEMICONDUCTOR DEVICES; TRANSISTORS