Published March 2006 | Version v1
Journal article Metadata-only

Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

Creators

  • 1. National Institute of Information and Communications Technology, 4-2-1 Nukuikita, Koganei, Tokyo 184-8795 (Japan)
  • 2. Japan Science and Technology Agency (Japan)

Description

We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564141

Additional details

Identifiers

DOI
10.1002/pssc.200564141;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
3
Journal Page Range
p. 520-523
ISSN
1610-1634

Conference

Title
32. International symposium on compound semiconductors (ISCS-2005)
Dates
18-22 Sep 2005
Place
Rust (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37032406
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; ABSORPTION SPECTRA; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INFRARED SPECTRA; INTERFERENCE; LAYERS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SORPTION; SPECTRA

Optional Information

Notes
With 4 figs., 1 tab., 17 refs.. SICI: 1610-1634(200603)3:3<520::AID-PSSC200564141>3.0.TX;2-C