Displacement damage effect on the radiation induced deuterium absorption for different types of SiC

Highlights: • Radiation induced deuterium absorption depends on the particular type of SiC. • Once subjected to displacement damage the deuterium absorption becomes very similar irrespectively to the type of SiC. • Displacement damage increases the deuterium absorption for SiC materials. - Abstract: SiC-derived materials are primary candidates for FCI due to their excellent properties. During reactor operation the ceramic material will be exposed to tritium and also to a hostile radiation environment The two main aims of this work are first to compare different types of SiC in terms of radiation induced deuterium absorption and second to address the displacement damage effects. Thermo stimulated desorption (TSD) measurements were carried out for both electron irradiated and unirradiated samples in order to evaluate radiation enhanced deuterium retention. The amount of deuterium absorbed during irradiation strongly depends on the type of SiC material. To address the displacement damage effects the different types of SiC materials were subjected also to 45 keV neon implantation in order to produce displacement damage. After being implanted the deuterium absorbed became very similar irrespectively to the type of SiC.