High order phase contrast and source divergence in low energy electron microscopy
- 1. College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China)
- 2. ShanghaiTech University, Shanghai, 200031 (China)
- 3. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Description
Highlights: • First experimental observations of high order phase contrast in aberration corrected low energy electron microscopy (AC-LEEM) • Determination of the electron source divergence by high order phase contrast in AC-LEEM We present experimental observations of high order phase contrast in aberration corrected low energy electron microscopy (AC-LEEM). Phase contrast produced by atomic steps on a Ag (111) surface exhibits prominent high order interference fringes, which have not been reported before. These phase contrast features depend upon defocus and incident electron energy, similar to the prominent first order fringes observed previously and in agreement with Fourier optics (FO) model predictions. The comparison of experimental results and FO model simulations demonstrates that fringe amplitudes are strongly affected at large defocus by the source divergence. This effect is exploited to quantitatively determine the divergence, 0.055 ± 0.005 mrad, of the field emission source in AC-LEEM under the imaging conditions used. Although the divergence determines the spatial coherence of the illumination in microscopy, it has not been possible to characterize this key instrumental parameter in LEEM before.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.ultramic.2021.113284Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2021.113284;
- PII
- S0304399121000735;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 225
- Journal Page Range
- vp.
- ISSN
- 0304-3991
- CODEN
- ULTRD6
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54112346
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; ELECTRON MICROSCOPY; ELECTRON SOURCES; ELECTRONS; FIELD EMISSION; ILLUMINANCE; INTERFERENCE; OPTICS; SURFACES
- Descriptors DEC
- ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; MICROSCOPY; PARTICLE SOURCES; RADIATION SOURCES; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2021 Published by Elsevier B.V.