Published August 1997
| Version v1
Miscellaneous
Heavily carbon doped gallium arsenide grown by chemical beam epitaxy
Description
no abstract available
Availability note (English)
Available from British Library Document Supply Centre- DSC:DXN021269Additional details
Publishing Information
- Imprint Pagination
- [vp.]
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 31046792
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature, No Abstract
- Descriptors DEI
- CARBON; DOPED MATERIALS; EPITAXY; GALLIUM ARSENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; NONMETALS; PNICTIDES