Influence of O2 pressure on structural, morphological and optical properties of TiO2-SiO2 composite thin films prepared by pulsed laser deposition
- 1. Department of Applied Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad 826004 (India)
- 2. UGC-DAE Consortium for Scientific Research, Indore 452017 (India)
Description
In this work, TiO2-SiO2 composite films were grown on amorphous quartz substrate at different oxygen partial pressure by pulsed laser deposition technique. The influence of oxygen partial pressure on structural, optical and surface properties of films was examined. Grazing incidence X-ray diffraction showed the formation of TiO2 rutile phase and degree of crystallinity decreased with the increase of oxygen pressure. Energy band gap of the films increased from 3.3 to 3.6 eV with the increase of oxygen pressure from 13.33 × 10−3 Pa to 20.00 Pa. Variation of surface morphology of films with increasing oxygen partial pressure was studied by Atomic Force Microscopy (AFM). AFM images are showing that grain size of deposited films is increasing with increasing oxygen pressure. Field effect scanning electron microscopy images also shows the similar surface morphology. X-ray Photoelectron Spectroscopy shows the evidence of oxygen defect and related Ti3+ states in composite films. Composite films showed blue photoluminescence (PL) emission by the excitation of 350 nm wavelength. Deconvoluted PL peaks showed emission originated from Ti3+ defect level associated with an oxygen vacancy. Oxygen vacancy decreased with increasing oxygen pressure. Intense blue emission with high luminous efficacy of radiation and maximum flux was achieved for 13.33 × 10−3 Pa oxygen pressure. Deposited films might be used in the field of blue light emitting diode application. - Highlights: • TiO2-SiO2 films are deposited at different O2 pressure by pulsed laser deposition. • Photoluminescence intensity of oxygen vacancy decreased with increase of O2 pressure. • Energy band gap increased from 3.3 to 3.6 eV with increasing O2 pressure. • Grain size increased with increasing O2 pressure. • Intense blue light emission was achieved.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2017.03.056Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2017.03.056;
- PII
- S0040-6090(17)30241-9;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 629
- Journal Page Range
- p. 79-89
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50023912
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ENERGY BEAM DEPOSITION; EXCITATION; GRAIN SIZE; LASER RADIATION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PULSED IRRADIATION; RUTILE; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FILMS; IRRADIATION; LUMINESCENCE; MATERIALS; MICROSCOPY; MICROSTRUCTURE; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; SIZE; SPECTROSCOPY; SURFACE COATING; THERMODYNAMIC PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.