Published 1973
| Version v1
Journal article
Ion implantation in silicon
Creators
- 1. Friedrich-Schiller-Universitaet Jena (German Democratic Republic), Sektion Physik
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Ionenimplantation in Silizium
Publishing Information
- Journal Title
- Wiss.Z. Friedrich-Schiller-Univ., Jena, Math.-Naturwiss. Reihe
- Journal Volume
- 22
- Journal Issue
- 1-2
- Series
- Wiss.Z. Friedrich-Schiller-Univ., Jena, Math.-Naturwiss. Reihe.
- Journal Page Range
- 99-114
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 5140028
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ANNEALING; BORON; CARRIER MOBILITY; CRYSTAL DOPING; ELECTRICAL PROPERTIES; ENERGY LOSSES; HALL EFFECT; ION CHANNELING; ION IMPLANTATION; LAYERS; PHOSPHORUS; RADIATION EFFECTS; RANGE; SEMICONDUCTOR DIODES; SILICON; SOLAR CELLS
- Descriptors DEC
- CHANNELING; DIRECT ENERGY CONVERTERS; ELEMENTS; HEAT TREATMENTS; MOBILITY; NONMETALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS