Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n⁺-InAs substrate and further processed into 2×2 photodiode array containing no n⁺-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation. (paper)