Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation
- 1. Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 2. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 3. Nigde University, Faculty of Arts and Sciences, Physics Department, Nigde (Turkey)
- 4. Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye-Manisa (Turkey)
- 5. Physics Department, Jazan University, P.O. Box 114, Jazan (Saudi Arabia)
Description
In this study, we investigate optical properties of metal nanoparticle crystals fabricated by implanting copper (Cu) ions into single silica (SiO2) crystals with 400 keV at various ion doses. The Cu implanted SiO2 (SiO2:Cu) crystal produces a broadband luminescence emission, ranging from blue to yellow, and having a blue luminescence peak at 546 nm. Such anomalous luminescence emission bands suggest that the ion implantation may give rise to aggregation of Cu nanoparticles in the host matrix. The boundary element method-based modelling of a given Cu nanoparticle aggregation was employed to justify the broadband luminescence emission. Formation of Cu nanoparticles in SiO2 is predicted through their optical absorption data. The experimental results are compared with results of Mie calculations and we observe that the higher ion dose produces the larger particle size. - Highlights: • We present the fabrication of metal nanoparticle crystals by implanting Cu into SiO2. • Numerical modelling of the Cu nanoparticles was employed. • Mie theory and BE method for a cluster of closely packed nanoparticles were used.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apradiso.2016.06.014Additional details
Identifiers
- DOI
- 10.1016/j.apradiso.2016.06.014;
- PII
- S0969-8043(16)30260-3;
Publishing Information
- Journal Title
- Applied Radiation and Isotopes
- Journal Volume
- 115
- Journal Page Range
- p. 109-112
- ISSN
- 0969-8043
- CODEN
- ARISEF
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48015697
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AGGLOMERATION; BOUNDARY ELEMENT METHOD; COMPARATIVE EVALUATIONS; COPPER; COPPER IONS; CRYSTALS; ION IMPLANTATION; KEV RANGE; LUMINESCENCE; NANOPARTICLES; OPTICAL PROPERTIES; PARTICLE SIZE; RADIATION DOSES; SILICON OXIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; DOSES; ELEMENTS; EMISSION; ENERGY RANGE; EVALUATION; FINITE ELEMENT METHOD; IONS; MATHEMATICAL SOLUTIONS; METALS; NUMERICAL SOLUTION; OXIDES; OXYGEN COMPOUNDS; PARTICLES; PHOTON EMISSION; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SIZE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.