Published March 2015 | Version v1
Journal article

Fabrication and characterization of Fe-doped In2O3 dilute magnetic semiconducting nanowires

  • 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing (China)
  • 2. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing (China)
  • 3. York-Nanjing International Center of Spintronics (YNICS), Department of Electronics, The University of York, YO10 3DD (United Kingdom)

Description

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model. (authors)

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
32
Journal Issue
3
Journal Page Range
[4 p.]
ISSN
0256-307X

Optional Information

Notes
5 figs., 42 refs.; http://dx.doi.org/10.1088/0256-307X/32/3/037501