Published January 2016 | Version v1
Journal article

Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3

  • 1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062 (China)
  • 2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006 (China)
  • 3. Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587 (Japan)
  • 4. Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656 (Japan)

Description

Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001) substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode's electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric) perovskite SrRuO3

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
6
Journal Issue
1
Journal Page Range
p. 015010-015010.6
ISSN
2158-3226
CODEN
AAIDBI

Optional Information

Notes
(c) 2016 Author(s)