Published 1990
| Version v1
Journal article
Determination of the concentration and the energy levels of electron traps by studying their field ionization
Description
A method for determination of electron traps parameters is proposed using the theoretical model describing the field ionization of the traps. The method is applied for a CdS semiconductor. Kinetic curves of electrically simulated current and photocurrent are presented as a function of illumination time. The results are discussed and the currents are studied for the temperature range from liquid nitrogen to room temperature. 2 figs., 12 refs
Additional details
Publishing Information
- Journal Title
- Bulgarian Journal of Physics
- Journal Volume
- 17
- Journal Issue
- 6
- Series
- Bulg. J. Phys.
- Journal Page Range
- 492-496
- ISSN
- 0323-9217
- CODEN
- BJPHD
INIS
- Country of Publication
- Bulgaria
- Country of Input or Organization
- Bulgaria
- INIS RN
- 22086772
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; ENERGY LEVELS; EXPERIMENTAL DATA; FERMI LEVEL; FERMI STATISTICS; MEASURING METHODS; MEDIUM TEMPERATURE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOIONIZATION; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TRAPS
- Descriptors DEC
- CURRENTS; DATA; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; INFORMATION; IONIZATION; LEPTONS; MATERIALS; MOBILITY; NUMERICAL DATA; PARTICLE MOBILITY; PHYSICAL PROPERTIES