A high precision CMOS weak current readout circuit
Creators
- 1. Institute of Electronics, Chinese Academy of Sciences, Beijing 100190 (China)
Description
This paper presents a high precision CMOS weak current readout circuit. This circuit is capable of converting a weak current into a frequency signal for amperometric measurements with high precision and further delivering a 10-bit digital output. A fast stabilization-enhanced potentiostat has been proposed in the design, which is used to maintain a constant bias potential for amperometric biochemical sensors. A technique based on source voltage shifting that reduces the leakage current of the MOS transistor to the reverse diode leakage level at room temperature was employed in the circuit. The chip was fabricated in the 0.35 μm chartered CMOS process, with a single 3.3 V power supply. The interface circuit maintains a dynamic range of more than 100 dB. Currents from 1 pA to 300 nA can be detected with a maximum nonlinearity of 0.3% over the full scale.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/7/075011Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 7
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42068523
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ACCURACY; AMPEROMETRY; DESIGN; ELECTRONIC CIRCUITS; LEAKAGE CURRENT; MOS TRANSISTORS; READOUT SYSTEMS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CHEMICAL ANALYSIS; CURRENTS; ELECTRIC CURRENTS; MATERIALS; QUANTITATIVE CHEMICAL ANALYSIS; SEMICONDUCTOR DEVICES; TITRATION; TRANSISTORS; VOLUMETRIC ANALYSIS