Published October 1, 1981
| Version v1
Journal article
Self-trapping and hot luminescence of excitons in rare gas solids
Description
The mechanism of intrinsic luminescence of excitons in crystalline Xe and Ar is treated. The band at 9.7 eV in Ar is shown to be non-elementary. The height of the exciton self-trapping barrier in Ar is determined experimentally (epsilon = 3.5 meV). An experimental and theoretical study of hot luminescence of self-trapping excitons in rare gas crystals is carried out. The contribution of hot luminescence to the total light sum increases in the series Xe-Ar-Ne. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 107
- Journal Issue
- 2
- Series
- Phys. Status Solidi B.
- Journal Page Range
- 479-490
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13657811
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON; CRYSTALS; EMISSION SPECTRA; EXCITATION; EXCITONS; LINE WIDTHS; LOW TEMPERATURE; LUMINESCENCE; NEON; TEMPERATURE DEPENDENCE; TRAPPING; ULTRALOW TEMPERATURE; VACANCIES; VERY LOW TEMPERATURE; X RADIATION; XENON
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY-LEVEL TRANSITIONS; IONIZING RADIATIONS; NONMETALS; POINT DEFECTS; QUASI PARTICLES; RADIATIONS; RARE GASES; SPECTRA