Measurements of the channeling effect in sputtering

Abstract Single crystals of germanium and indium antimonide, rotated about axes normal to their surfaces were bombarded with 5–15 keV inert gas ions. The resultant variation of the sputtering yield with the angle of ion incidence was followed by means of a modulated mass spectrometric technique capable of monitoring one or more masses in the form of sputtered neutrals and/or secondary ions. Critical angles for channeling, relative reductions in yield and transparency ratios were calculated from the data. The experimental results were compared with predictions of the Onderdelinden and transparency models of sputtering.