Published 1993 | Version v1
Book Metadata-only

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

Creators

  • 1. IMEC, Leuven (Belgium)

Description

A study on ion beam synthesis of buried α and β-FeSi2 in <100> Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that the holes are the majority carriers in the semiconducting layers

Part of:
Beam solid interactions: Fundamentals and applications

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-174-3
Imprint Title
Beam solid interactions: Fundamentals and applications
Imprint Pagination
932 p.
Journal Page Range
p. 869-874.

Conference

Title
16. Materials Research Society (MRS) fall meeting.
Dates
30 Nov - 5 Dec 1992.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25036154
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CRYSTAL STRUCTURE; EPITAXY; EXPERIMENTAL DATA; GRAIN ORIENTATION; ION IMPLANTATION; IRON SILICIDES; RUTHERFORD SCATTERING; SILICON; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; ELASTIC SCATTERING; ELEMENTS; INFORMATION; IRON COMPOUNDS; MICROSTRUCTURE; NUMERICAL DATA; ORIENTATION; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Secondary number(s)
CONF-921101--.