Published 1990 | Version v1
Book

X-ray and charged particle detection with CsI(Tl) layer coupled to a-Si:H photodiode layers

  • 1. Lawrence Berkeley Lab., CA (United States)
  • 2. Xerox Palo Alto Research Center, CA (United States)

Description

This paper reports on a compact real-time X-ray and charged particle imager with digitized position output built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100-1000 μm thick were evaporated on glass substrates from a crystal CsI(Tl). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(Tl). Single β particle detection was demonstrated with this combination. The light spread inside evaporated CsI(Tl) was suppressed by its columnar structure. Scintillation detection gives much larger signals than direct X-ray detection due to the increased energy deposition in the detector material. Fabrication of monolithic type X-ray sensors consisting of CsI + a-Si:H photodiodes is discussed

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
IEEE nuclear science symposium conference record emdash 1990
Imprint Pagination
1636 p.
Journal Page Range
p. 198-205.

Conference

Title
1990 Institute of Electrical and Electronics Engineers (IEEE) nuclear science symposium.
Dates
22-27 Oct 1990.
Place
Arlington, VA (USA).

Optional Information

Secondary number(s)
CONF-9010220--.