Published January 7, 2011
| Version v1
Journal article
Improving Ion Implanter Productivity with In-situ Cleaning
Creators
- 1. ATMI Inc., 7 Commerce Drive, Danbury CT (United States)
- 2. Analog Devices, 804 Woburn Street, Wilmington, MA (United States)
Description
Ion source lifetime is generally a critical factor in overall implanter productivity. However, extended ion source life only provides value in a manufacturing environment if the ion beam remains stable. As an ion source ages, apertures and insulators become coated with conductive dopant residues which cause beam instabilities, resulting in implant stoppages. These stoppages create failures and/or assists which are logged in the implanter's data files. Analog Devices has recently evaluated in-situ ion source cleaning based on use of xenon difluoride chemistry. The paper will describe how the in-situ cleaning decreased logged failures/assists, resulting in increased implanter productivity.
Additional details
Identifiers
- DOI
- 10.1063/1.3548438;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1321
- Journal Issue
- 1
- Journal Page Range
- p. 419-422
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 18. international conference on ion implantation technology
- Acronym
- IIT 2010
- Dates
- 6-11 Jun 2010
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42101763
- Subject category
- S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- APERTURES; CLEANING; ELECTRODES; EQUIPMENT; FAILURES; IMPLANTS; INSTABILITY; ION BEAMS; ION IMPLANTATION; ION SOURCES; LIFETIME; MANUFACTURING; PRODUCTIVITY
- Descriptors DEC
- BEAMS; OPENINGS
Optional Information
- Notes
- (c) 2010 American Institute of Physics