Published January 7, 2011 | Version v1
Journal article

Improving Ion Implanter Productivity with In-situ Cleaning

  • 1. ATMI Inc., 7 Commerce Drive, Danbury CT (United States)
  • 2. Analog Devices, 804 Woburn Street, Wilmington, MA (United States)

Description

Ion source lifetime is generally a critical factor in overall implanter productivity. However, extended ion source life only provides value in a manufacturing environment if the ion beam remains stable. As an ion source ages, apertures and insulators become coated with conductive dopant residues which cause beam instabilities, resulting in implant stoppages. These stoppages create failures and/or assists which are logged in the implanter's data files. Analog Devices has recently evaluated in-situ ion source cleaning based on use of xenon difluoride chemistry. The paper will describe how the in-situ cleaning decreased logged failures/assists, resulting in increased implanter productivity.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1321
Journal Issue
1
Journal Page Range
p. 419-422
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
18. international conference on ion implantation technology
Acronym
IIT 2010
Dates
6-11 Jun 2010
Place
Kyoto (Japan)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42101763
Subject category
S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
APERTURES; CLEANING; ELECTRODES; EQUIPMENT; FAILURES; IMPLANTS; INSTABILITY; ION BEAMS; ION IMPLANTATION; ION SOURCES; LIFETIME; MANUFACTURING; PRODUCTIVITY
Descriptors DEC
BEAMS; OPENINGS

Optional Information

Notes
(c) 2010 American Institute of Physics