Published October 1987 | Version v1
Journal article Metadata-only

Crystallization of GaxIn1-xAsySb1-y solid solutions on the substrates of GaSb and InAs

Creators

  • 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)
  • 2. Moskovskij Inst. Ehlektronnoj Tekhniki (USSR)

Description

Conditions of crystallization from the liquid phase of GaxIn1-xAsySb1-y solid solutions isoperiod with GaSb and InAs using the data on equilibrium compositions of liquid and solid phases are determined. Melt compositions and values of its overcooling necessary for crystallization of GaxIn1-xAsySb1-y solid solutions isoperiod with substrates of GaSb and InAs are established. Composition range of solid solutions (0<=x<=0.3) which can be grown on gallium antimonide substrates of overcooled (oversaturated) liquid phase is established. It is shown that it is impossible to prepare layers of solid solutions corresponding to medium part of isoperiod lines in composition above 820 deg K

Additional details

Additional titles

Original title (Russian)
Кристаллизация твердых растворов Га

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
23
Journal Issue
10
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
1610-1614
ISSN
0002-337X
CODEN
IVNMA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
19091894
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY ALLOYS; ARSENIC ALLOYS; CRYSTALLIZATION; GALLIUM ALLOYS; HIGH TEMPERATURE; INDIUM ALLOYS; INDIUM ARSENIDES; SOLID SOLUTIONS; SUBSTRATES
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; DISPERSIONS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; MIXTURES; PHASE TRANSFORMATIONS; SOLUTIONS