Published March 31, 2011 | Version v1
Journal article

Electrostatic immobilization of polyoxometallates on silicon: X-ray Photoelectron Spectroscopy and electrochemical studies

  • 1. INAC/LCIB/RICC (UMR E3 CEA-UJF, FRE CNRS 3200), CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
  • 2. INAC/SPrAM/CREAB (UMR 5819 CEA-CNRS-UJF), CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
  • 3. LETI/DPTS/SCPIO/LCPO, CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
  • 4. INAC/DIR, CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)

Description

Keggin-type dodecatungstosilicates polyoxometallates (POMs) ([SiW12O40]4-) were immobilized in a straightforward manner by electrostatic interactions on ammonium layers covalently grafted on silicon. This method does not require any POM modification synthetical steps. The presence of [SiW12O40]4- on the surface is demonstrated by X-ray Photoelectron Spectroscopy from a specific modification of the tungsten 4f7/2 signal. Moreover the surface coverage of [SiW12O40]4- has been improved by 35% upon changing the nature of the anchoring ammonium groups from protonated to methylated amino groups. The organic-inorganic composite films have also been characterized by cyclic voltammetry showing that POMs have a specific behavior on silicon surfaces. In addition the use of a polyallylamine capping layer proved to stabilize efficiently the POM electrochemical response.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.01.341

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.01.341;
PII
S0040-6090(11)00406-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
11
Journal Page Range
p. 3732-3738
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.