Electrostatic immobilization of polyoxometallates on silicon: X-ray Photoelectron Spectroscopy and electrochemical studies
Creators
- 1. INAC/LCIB/RICC (UMR E3 CEA-UJF, FRE CNRS 3200), CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
- 2. INAC/SPrAM/CREAB (UMR 5819 CEA-CNRS-UJF), CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
- 3. LETI/DPTS/SCPIO/LCPO, CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
- 4. INAC/DIR, CEA-Grenoble 17 rue des martyrs, 38054 Grenoble cedex 9 (France)
Description
Keggin-type dodecatungstosilicates polyoxometallates (POMs) ([SiW12O40]4-) were immobilized in a straightforward manner by electrostatic interactions on ammonium layers covalently grafted on silicon. This method does not require any POM modification synthetical steps. The presence of [SiW12O40]4- on the surface is demonstrated by X-ray Photoelectron Spectroscopy from a specific modification of the tungsten 4f7/2 signal. Moreover the surface coverage of [SiW12O40]4- has been improved by 35% upon changing the nature of the anchoring ammonium groups from protonated to methylated amino groups. The organic-inorganic composite films have also been characterized by cyclic voltammetry showing that POMs have a specific behavior on silicon surfaces. In addition the use of a polyallylamine capping layer proved to stabilize efficiently the POM electrochemical response.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2011.01.341Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2011.01.341;
- PII
- S0040-6090(11)00406-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 519
- Journal Issue
- 11
- Journal Page Range
- p. 3732-3738
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069208
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTROCHEMISTRY; INTERACTIONS; LAYERS; SILICATES; SILICON; SURFACES; THIN FILMS; TUNGSTEN COMPOUNDS; VOLTAMETRY; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHEMISTRY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.