Published September 6, 1976
| Version v1
Journal article
Anomalous electrical resistivity and defects in A-15 compounds
Creators
- 1. Bell Laboratories, Murray Hill, New Jersey 07974
Description
Measurements of the temperature dependence of the electrical resistivity and correlations observed with T/sub c/ for V3Si, V3Ge, and A-15 Nb-Ge show (i) the existence of a universal defect in the A-15 superconductors which is not nonstoichiometry, (ii) a normal state anomaly also strongly influenced by the defects, and (iii) evidence that T/sub c/ and the electron-phonon interactions for transport processes are approx.100 times more sensitive to defect producing sample modifications in the A-15 compounds than in Nb
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 37
- Journal Issue
- 10
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 637-638
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 8286491
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHEMICAL COMPOSITION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; PHYSICAL RADIATION EFFECTS; SUPERCONDUCTIVITY; SUPERCONDUCTORS; TEMPERATURE DEPENDENCE; TRANSITION TEMPERATURE; VANADIUM SILICIDES
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SILICIDES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent