Published October 14, 1981
| Version v1
Journal article
Rutherford back-scattering and ellipsometry of selenium implanted InP
Creators
- 1. Surrey Univ., Guildford (UK). Dept. of Electronic and Electrical Engineering
Description
Good correlation has been found between disorder, measured by Rutherford back-scattering and the extinction coefficient obtained from ellipsometry measurements for 200 keV selenium ions implanted up to a dose of 1 x 1015 cm-2 at room temperature. Both techniques show that InP becomes amorphous for doses greater than 5 x 1013 Se+ cm-2. The magnitude of the reflectivity, refractive index and extinction coefficient, obtained from ellipsometry, are presented as a function of dose. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., D (London). Appl. Phys.
- Journal Volume
- 14
- Journal Issue
- 10
- Series
- J. Phys., D (London). Appl. Phys.
- Journal Page Range
- 1915-1922
- ISSN
- 0022-3727
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13651808
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- AMORPHOUS STATE; BACKSCATTERING; CATIONS; DOSE-RESPONSE RELATIONSHIPS; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; ION IMPLANTATION; KEV RANGE 100-1000; MEDIUM TEMPERATURE; POLARIZATION; REFLECTION; REFRACTIVE INDEX; RUTHERFORD SCATTERING; SELENIUM IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DATA; ELASTIC SCATTERING; ENERGY RANGE; INDIUM COMPOUNDS; INFORMATION; IONS; KEV RANGE; NUMERICAL DATA; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING