Published July 1, 2010 | Version v1
Journal article Metadata-only

Performance study of InAs/GaAs quantum dot covered by graded InxGa1-As layer

Creators

  • 1. Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

Description

InAs/GaAs quantum dots (QDs) with graded InxGa1-xAs strained-reducing layer (SRL) are grown by metal-organic chemical vapor deposition, the effects of Indium (In) composition and thickness in InxGa1-xAs on QD morphological characteristics and optical properties are investigated. Compared with InxGa1-xAs SRL with fixed In content, gradient InxGa1-xAs SRL can further improve the growth quality of InAs QDs, enhance luminescence intensity and extend emission spectrum toward longer wavelength.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.04.032

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.04.032;
PII
S0040-6090(10)00555-9;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
18
Journal Page Range
p. 5278-5281
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42059972
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTRA; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OPTICAL PROPERTIES; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM DOTS; STRAINS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA; SURFACE COATING

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.