The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films

Highlights: • The nanohole oscillating cavity arraying. • Pulsed laser interference direct ablation technique on selenium-based nanomaterials. • The single layer nano-laser device emission at 903 nm. • Laser emission mechanism of the film arraying. Nano-laser has a widely application in many fields such as biosensors, quantum memory, energy harvesting, photonic applications. However, there are still some problems in current preparation process of nano-laser device such as complex fabrication methods and high cost. Meanwhile, the size of nano-lasers has always been a challenge in the fabrication, and single-layer nano-film lasers have rarely been reported. Here, we propose a method of three beams laser interference ablation on Ga_0.1Co_0.5ZnSe_0.4 film. The nanohole arrays with a period of 1 μm are fabricated. The film of Ga_0.1Co_0.5ZnSe_0.4 used for ablation is prepared via Pulse Laser Deposition (PLD) technology. Then, the structure and components of the film are characterized by X-Ray Diffraction (XRD) and Raman spectrum. The real existence and chemical valence state of the Co, Ga, Zn and Se elements are proved by X-Ray Photoelectron Spectroscopy (XPS). The stoichiometry of thin film is confirmed by X-Ray Fluorescence Spectrometer (XRF). The morphology and cross section of the nanohole arrays is demonstrated by Scanning Electron Microscope (SEM), illustrating the depth of hole around 760 nm. To gain more understanding about the laser emission, the single-layer film with nanohole structure is simulated by Finite Difference Time Domain (FDTD) solutions. Finally, the PL spectrum reveals a 903 nm-laser emission at near-infrared. All the results show that a simple, efficient and low-cost single-layer nano laser film is presented.