Published 1989
| Version v1
Miscellaneous
Computer simulation of double crystal X-ray rocking curves for analysis of Si implanted GaAs
Creators
Description
Short note. 5 refs
Additional details
Publishing Information
- Imprint Title
- 12. European crystallographic meeting. V. 3
- Imprint Pagination
- 475 p.
- Journal Page Range
- p. 156.
- Report number
- INIS-SU--224(Vol.3)
Conference
- Title
- 12. European crystallographic meeting.
- Dates
- 20-29 Aug 1989.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22022269
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COMPUTERIZED SIMULATION; GALLIUM ARSENIDES; ION IMPLANTATION; LATTICE PARAMETERS; RADIATION DOSES; SILICON IONS; STRAINS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; IONS; PNICTIDES; SIMULATION