Ellipsometric characterization of oxide layers on silicon substrate

Method of measuring ellipsometric parameters of polarised light from the surface of examined material enable to specify the optical parameters of thin films. A simple model assumes an non absorbing homogenous layer lying on an absorbing substrate of defined parameters. The growth of oxide layers on Si doped by P and Sb in a low thermal rf generated oxygen plasma was studied. The validity of the assumed model by a selection of measuring parameters - two wavelengths and two incidence angles verified. (authors)