Published January 2019 | Version v1
Journal article

Growth, defects, radiation resistant and optical properties of 30 at% Er:GSAG laser crystal

  • 1. University of Science and Technology of China, Hefei 230026 (China)
  • 2. Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China)

Description

30 at% Er3+:GSAG single crystal was successfully grown by the Czochralski method. The dislocation of (111) face is studied using the chemical etching with the phosphoric acid etchant. The luminescence properties at 2.6–3.0 µm are systematically studied by measuring the fluorescence spectra and lifetimes to the transition of 4I11/24I13/2. The long fluorescence lifetime, high fluorescence intensity, and large gain σem spectra indicate that the 30 at% Er:GSAG crystal has the great potential for the multi-wavelength laser output at 2.6–3.0 µm. Meanwhile, the absorption and fluorescence properties of 30 at% Er:GSAG crystal under the gamma-ray radiation with three different intensities (35, 70, and 105 Mrad) have been investigated, indicate that this crystal can be considered as a promising MIR laser gain medium for being used under radiant environment. In addition, the luminescence property of 30 at% Er:GSAG crystal in visible and 1.5–1.7 µm was also studied, which shows the possibility to generate the laser around 1.6 µm.

Additional details

Identifiers

DOI
10.1016/j.jlumin.2018.08.065;
PII
S0022231318304435;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
205
Journal Page Range
p. 109-114
ISSN
0022-2313
CODEN
JLUMA8

Optional Information

Copyright
Copyright (c) 2018 Published by Elsevier B.V.