An apparatus for ion-surface collisional process studies and surface analysis

An experimental setup allowing both surface and interface analysis and ion-surface collisional process studies is described. It consists of an ion beam line which provides 1-80 keV mass analysed rare gas and alkali-metal ions, and an UHV chamber. This one is equipped with two time of flight systems which allow energy and mass analysis of scattered and recoiled particles at scattering angles 180 and in the range 0-165 . In addition a fixed electrostatic hemispherical analyser can record either the positive ions or the emitted electrons, at an angle of 90 from the ion beam. The versatility of the apparatus is illustrated with data on clean Si (111) surface and on impurity-or Cs-covered Si surface: chemical and crystallographic structure analysis, depth profile, ion fractions and ion-induced electron spectroscopy. ((orig.))