Published January 2005
| Version v1
Journal article
The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix
Creators
- 1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 198103 (Russian Federation)
- 2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
- 3. St. Petersburg State Polytechnical University, St. Petersburg, 195251 (Russian Federation)
- 4. Max Planck Institute of Microstructure Physics, 06120 Halle (Germany)
- 5. Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom)
Description
Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by transmission electron microscopy demonstrated that the vertically aligned QDs are equal in size. Photoluminescence measurements revealed that the spectra of the samples under study contain bands corresponding to electronic states in QD molecules
Additional details
Identifiers
- DOI
- 10.1134/1.1852660;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 39
- Journal Issue
- 1
- Journal Page Range
- p. 124-126
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36096926
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 136-139 (No. 1, 2005); (c) 2005 Pleiades Publishing, Inc.