Published 1981
| Version v1
Book
TEM studies of GaAs implanted with Zn or Se and laser- or furnace-annealed
- 1. Oxford Univ. (UK). Dept. of Metallurgy
- 2. Surrey Univ., Guildford (UK). Dept. of Electronic and Electrical Engineering
Description
TEM examinations have been made of (100) GaAs implanted with Zn+ (150 keV) and Se+ (300 keV) ions, at doses of 1015 ions cm-2, and subsequently laser-annealed without an encapsulant using energy densities in the range 0.2 to 1.6 J cm-2. The effect of using a laser beam diffuser was assessed. The damage structures observed are interpreted in terms of the melting of a surface layer. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol (UK)
- ISBN
- 0 85498 151 9
- Imprint Title
- Microscopy of semiconducting materials, 1981
- Imprint Pagination
- 464 p.
- Journal Page Range
- p. 113-120.
Conference
- Title
- Royal Microscopical Society Conference on microscopy of semiconducting materials.
- Dates
- 6 - 10 Apr 1981.
- Place
- Oxford (UK).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 14734725
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANGULAR DISTRIBUTION; ANNEALING; CRYSTAL LATTICES; ELECTRON MICROSCOPY; ENERGY DENSITY; GALLIUM ARSENIDES; ION IMPLANTATION; LASER RADIATION; LAYERS; MELTING; RADIATION DOSES; SELENIUM IONS; SURFACES; ZINC IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; MICROSCOPY; PHASE TRANSFORMATIONS; RADIATIONS