Published February 1996
| Version v1
Journal article
Muonium in semiconductors and some implications for hydrogen impurities
Creators
- 1. Rice Univ., Houston, TX (United States). Dept. of Physics
- 2. Texas Tech Univ., Lubbock, TX (United States). Dept. of Physics
Description
A description of the structures, charge states, and the transitions among them for isolated interstitial muonium in covalent semiconductors is presented. This description appears to be general, explaining a wealth of experimental observations on group IV and III-V semiconductors. Observations which support various features of this general description will be presented. A brief mention of some implications for hydrogen in semiconductors will follow. (orig.)
Additional details
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 97-98
- Journal Issue
- 1-4
- Journal Page Range
- p. 171-192.
- ISSN
- 0304-3843
- CODEN
- HYINDN
Conference
- Title
- 10. international conference on hyperfine interactions (HFI-10).
- Dates
- 28 Aug - 1 Sep 1995.
- Place
- Louvain (Belgium).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27061348
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE STATES; ENERGY-LEVEL TRANSITIONS; HYDROGEN ADDITIONS; HYPERFINE STRUCTURE; INTERSTITIALS; MUON PROBES; MUONIUM; RELAXATION TIME; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MATERIALS; POINT DEFECTS; PROBES