Published November 2015 | Version v1
Journal article Metadata-only

Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

Creators

  • 1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  • 2. Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

Description

A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected

Additional details

Identifiers

DOI
10.1134/S1063782615110044;

Publishing Information

Journal Title
Semiconductors
Journal Volume
49
Journal Issue
11
Journal Page Range
p. 1400-1404
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47039491
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ABSORPTION SPECTROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFERENCE; PERIODICITY; QUANTUM MECHANICS; QUANTUM WELLS; SPECTRAL REFLECTANCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MECHANICS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; VARIATIONS

Optional Information

Copyright
Copyright (c) 2015 Pleiades Publishing, Ltd.