Effects of cerium oxide doping on the microstructure and properties of ITO targets and the photoelectric properties of the films

In the study, 0–2.0 wt% cerium oxides (CeO₂) were employed to enhance the densification and properties of indium tin oxide (ITO) targets. The effects of CeO₂ on the phase composition, microstructure, resistivity and fracture strength of ITO targets and the photoelectric properties of the films were investigated in detail. Experimental results show that the optimum doping amount of CeO₂ is 0.5 wt%. The functions of CeO₂ doping are: (1) Lowering the sintering temperature by nearly 60 °C, which is attributed to the inhibition of the decomposition of In₂O₃ and SnO₂; (2) Refining the grain size and promoting the formation of In₄Sn₃O₁₂ phase; (3) As the donor dopant to reduce the resistivity of ITO targets and strengthening the inter-facial bonding force so as to enhance the fracture strength of ITO targets; (4) Intensifying the disorder of film non-crystals, improving the surface morphology and enhancing the transmittance.