Published 1998
| Version v1
Miscellaneous
Estimation of doping limit of some elements in GaSb single crystals
Creators
- 1. Institute of Physics, Semiconductor Department, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- Cd, In, Te and other elements as dopants
Publishing Information
- ISBN
- 83-901181-0-6
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 116
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 12-16 Oct 1998
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31044407
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIC ADDITIONS; CADMIUM ADDITIONS; CHEMICAL COMPOSITION; COPPER ADDITIONS; CZOCHRALSKI METHOD; DOPED MATERIALS; GALLIUM ARSENIDES; GERMANIUM ADDITIONS; INDIUM ADDITIONS; MANGANESE ADDITIONS; MEETINGS; MONOCRYSTALS; NITROGEN ADDITIONS; SELENIUM ADDITIONS; SILICON ADDITIONS; SULFUR ADDITIONS; TELLURIUM ADDITIONS; TIN ADDITIONS; ZINC ADDITIONS
- Descriptors DEC
- ALLOYS; ARSENIC ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM ALLOYS; COPPER ALLOYS; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; GERMANIUM ALLOYS; INDIUM ALLOYS; MANGANESE ALLOYS; MATERIALS; PNICTIDES; SELENIUM ALLOYS; SILICON ALLOYS; TELLURIUM ALLOYS; TIN ALLOYS; TRANSITION ELEMENT ALLOYS; ZINC ALLOYS
Optional Information
- Notes
- 2 refs