Published March 2000
| Version v1
Journal article
Post-irradiation effects in MOS structures
Description
The paper presents results of a study of post-electron irradiation effects in MOS structures (MOS capacitors, VDMOS transistors). The behavior of oxide trap charge and interface traps have been monitored with standard C-V method. By evaluating electrical parameters depending on volume and surface effects, we could compare the significance of interface states versus volume effects in irradiated samples
Additional details
Identifiers
- PII
- S0168583X99009635;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 161-163
- Journal Issue
- 4
- Journal Page Range
- p. 381-386
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33042969
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGES; ELECTRICAL PROPERTIES; ELECTRON BEAMS; INTERFACES; MOS TRANSISTORS; SURFACE PROPERTIES; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LEPTON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.