The influence of excessive H₂ during barrier growth on InGaN light-emitting diodes

The influence of excessive H₂ flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H₂ treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H₂ treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H₂ treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H₂, which may be due to the suppressed Poole–Frenkel effect. (paper)