Published February 15, 1990
| Version v1
Journal article
GaAs(111)A-(2x2) reconstruction studied by scanning tunneling microscopy
Creators
- 1. Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510 (USA)
Description
Atomic-resolution scanning tunneling microscope (STM) images have been obtained from the GaAs(111)A (gallium-terminated) surface. The STM images conclusively show that the (2x2) periodicity arises from a regular array of gallium vacancies in agreement with a previously proposed model. It is shown that this reconstruction is explained by the reduction in energy that is achieved by the complete transfer of electrons from gallium dangling bonds into arsenic dangling bonds, which are then exactly filled
Additional details
Publishing Information
- Journal Title
- Physical Review, B: Condensed Matter
- Journal Volume
- 41
- Journal Issue
- 5
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 3226-3229
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21055190
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL STRUCTURE; GALLIUM ARSENIDES; SCANNING ELECTRON MICROSCOPY; TUNNEL EFFECT; VACANCIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; MICROSCOPY; PNICTIDES; POINT DEFECTS